Research and Markets: Nanometer CMOS: Comprehensive Overview of All the Important Issues Concerning Modern Si MOSFETs

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented.

An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

Readership: Graduates and postgraduate students, researchers, engineers and managers in the fields of electrical & electronic engineering and nanoelectronics & microelectronics.

Key Topics Covered:

• Evolution and Recent Advances in Si Electronics
• MOSFET Fundamentals, Theory, and Modeling
• Nanometer MOSFETs
• RF MOSFETs
• Overview of Nanometer CMOS Technology
• Challenges of Giga-Scale Integration

For more information visit http://www.researchandmarkets.com/research/f10c57/nanometer_cmos

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